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Liao, P.-H., Peng, K.-P., Lin, H.-C., George, T., & Li, P.-W. (2018). Self-organized Ge nanospherical gate/SiO2/Si0.15Ge0.85-nanosheet n-FETs featuring high ON-OFF drain current ratio. IEEE Journal of the Electron Devices Society, 1–1. doi:10.1109/jeds.2018.2876519
10.1109/jeds.2018.2876519
